A review of the gate-all-around nanosheet FET process opportunities
S Mukesh, J Zhang - Electronics, 2022 - mdpi.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
A critical review on performance, reliability, and fabrication challenges in nanosheet FET for future analog/digital IC applications
This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
Design insights of nanosheet FET and CMOS circuit applications at 5-nm technology node
VB Sreenivasulu, V Narendar - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
In this article, FinFET, vertically stacked gate-all-around (GAA) nanowire (NW), and
nanosheet (NS) FETs performance are estimated with equal effective channel widths () at …
nanosheet (NS) FETs performance are estimated with equal effective channel widths () at …
Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET
UK Das, TK Bhattacharyya - IEEE transactions on electron …, 2020 - ieeexplore.ieee.org
The performances of FinFET, gate-all-around (GAA) nanowire/nanosheet, and U-shaped
FETs (UFETs) are studied targeting the 3-nm node (N3) and beyond CMOS dimensions. To …
FETs (UFETs) are studied targeting the 3-nm node (N3) and beyond CMOS dimensions. To …
Impact of scaling on nanosheet FET and CMOS circuit applications
NA Kumari, VB Sreenivasulu… - ECS Journal of Solid State …, 2023 - iopscience.iop.org
In this paper, the impact of scaling on the gate all around the nanosheet field effect transistor
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …
Common source amplifier and ring oscillator circuit performance optimization using multi-bridge channel FETs
VB Sreenivasulu, NA Kumari, V Lokesh… - ECS Journal of Solid …, 2023 - iopscience.iop.org
In this paper the DC, analog/RF device and circuit applications of nanosheet (NS) FET is
performed. To enhance power performance co-optimization geometry parameters like NS …
performed. To enhance power performance co-optimization geometry parameters like NS …
Optimization of design space for vertically stacked junctionless nanosheet FET for analog/RF applications
This paper investigates the various device dimensions such as gate length (Lg), nanosheet
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …
Characteristics of stacked gate-all-around Si nanosheet MOSFETs with metal sidewall source/drain and their impacts on CMOS circuit properties
In this brief, we computationally examine electrical characteristics of stacked gate-all-around
Si nanosheet MOSFETs (GAA NS-FETs) with and without metal sidewall (MSW) …
Si nanosheet MOSFETs (GAA NS-FETs) with and without metal sidewall (MSW) …
BSIM compact model of quantum confinement in advanced nanosheet FETs
We propose a compact model for nanosheet FETs that take the effects of quantum
confinement into account. The model captures the nanosheet width and thickness …
confinement into account. The model captures the nanosheet width and thickness …
Design optimization techniques in nanosheet transistor for RF applications
Nanosheet gate-all-around transistors are analyzed for RF applications using calibrated
TCAD simulations. The effects of stack spacing and number of stacks on device performance …
TCAD simulations. The effects of stack spacing and number of stacks on device performance …