Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the
channel on all direction. This new structure is earning extremely attention from research to …

This work represents a unique GAA MOSFET with metal work-function variations (WFVs)
and ferroelectric material as dielectric. A random distribution of metal grain (TiN) with grain …

Stress/strain engineering techniques are employed to boost the performance of Gate-all-
around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm …

Emerging machine-learning (ML) methodology has been overcoming the challenging task of
analyzing the process variation effect of nanoscale devices using 3-D stochastic device …

The comprehensive layout-dependence lattice and process-stress variations and induced
mobility gain in sub-7 nm germanium (Ge)-based Fin-type field-effect transistors (FinFETs) …

Based on a self-consistent Schrödinger-Poisson solver and top-of-the-barrier model, a
quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The …

Nanowires, due to their unique properties, are emerging as the building blocks of the next-
generation electronics industry and will play a critical role in both low-and high-performance …

In this paper, we have reported the impact of gate work function variability on nanosheet
field effect transistors (FETs) using 3D TCAD numerical device simulation. We have also …

The reliability of Silicon-based nanosheet transistors (NSTs) is limited by process-induced
variations (PIVs) like work-function-variations (WFV), line-edge-roughness (LER), gate-edge …

The stacked nanosheet field-effect transistors (SNS-FETs) are potential contenders for sub-7
nm technology. Device miniaturization leads to a larger off-state current and a higher …