Scanning probe lithography: state-of-the-art and future perspectives

P Fan, J Gao, H Mao, Y Geng, Y Yan, Y Wang, S Goel… - Micromachines, 2022 - mdpi.com
High-throughput and high-accuracy nanofabrication methods are required for the ever-
increasing demand for nanoelectronics, high-density data storage devices, nanophotonics …

Advances and opportunities in materials science for scalable quantum computing

V Lordi, JM Nichol - MRS Bulletin, 2021 - Springer
By harnessing unique quantum mechanical phenomena, such as superposition and
entanglement, quantum computers offer the possibility to drastically outperform classical …

Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots

X Wang, E Khatami, F Fei, J Wyrick… - Nature …, 2022 - nature.com
The Hubbard model is an essential tool for understanding many-body physics in condensed
matter systems. Artificial lattices of dopants in silicon are a promising method for the analog …

2023 roadmap for materials for quantum technologies

C Becher, W Gao, S Kar, CD Marciniak… - Materials for …, 2023 - iopscience.iop.org
Quantum technologies are poised to move the foundational principles of quantum physics to
the forefront of applications. This roadmap identifies some of the key challenges and …

A chirality-based quantum leap

CD Aiello, JM Abendroth, M Abbas, A Afanasev… - ACS …, 2022 - ACS Publications
There is increasing interest in the study of chiral degrees of freedom occurring in matter and
in electromagnetic fields. Opportunities in quantum sciences will likely exploit two main …

Impact of incorporation kinetics on device fabrication with atomic precision

JA Ivie, Q Campbell, JC Koepke, MI Brickson… - Physical Review …, 2021 - APS
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in
which dopant atoms are precisely positioned in a Si lattice within approximately 1 nm of a …

Conductivity and size quantization effects in semiconductor -layer systems

JP Mendez, D Mamaluy - Scientific Reports, 2022 - nature.com
We present an open-system quantum-mechanical 3D real-space study of the conduction
band structure and conductive properties of two semiconductor systems, interesting for their …

Electric current paths in a Si: P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy

L Basso, P Kehayias, J Henshaw, MS Ziabari… - …, 2022 - iopscience.iop.org
The recently-developed ability to control phosphorous-doping of silicon at an atomic level
using scanning tunneling microscopy, a technique known as atomic precision advanced …

Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

TJZ Stock, O Warschkow, PC Constantinou… - Advanced …, 2024 - Wiley Online Library
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal
hold promise to provide novel materials with tailored electronic, magnetic, and optical …

Si epitaxy on Cl-Si (100)

A Farzaneh, RE Butera - Applied Surface Science, 2022 - Elsevier
Current atomically-precise fabrication methods in Si utilize a scanning tunneling microscope
(STM) to pattern a monatomic resist adsorbed on Si (100). Recent interest in the use of Cl …