Scanning probe lithography: state-of-the-art and future perspectives
High-throughput and high-accuracy nanofabrication methods are required for the ever-
increasing demand for nanoelectronics, high-density data storage devices, nanophotonics …
increasing demand for nanoelectronics, high-density data storage devices, nanophotonics …
Advances and opportunities in materials science for scalable quantum computing
By harnessing unique quantum mechanical phenomena, such as superposition and
entanglement, quantum computers offer the possibility to drastically outperform classical …
entanglement, quantum computers offer the possibility to drastically outperform classical …
Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots
The Hubbard model is an essential tool for understanding many-body physics in condensed
matter systems. Artificial lattices of dopants in silicon are a promising method for the analog …
matter systems. Artificial lattices of dopants in silicon are a promising method for the analog …
2023 roadmap for materials for quantum technologies
Quantum technologies are poised to move the foundational principles of quantum physics to
the forefront of applications. This roadmap identifies some of the key challenges and …
the forefront of applications. This roadmap identifies some of the key challenges and …
A chirality-based quantum leap
There is increasing interest in the study of chiral degrees of freedom occurring in matter and
in electromagnetic fields. Opportunities in quantum sciences will likely exploit two main …
in electromagnetic fields. Opportunities in quantum sciences will likely exploit two main …
Impact of incorporation kinetics on device fabrication with atomic precision
JA Ivie, Q Campbell, JC Koepke, MI Brickson… - Physical Review …, 2021 - APS
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in
which dopant atoms are precisely positioned in a Si lattice within approximately 1 nm of a …
which dopant atoms are precisely positioned in a Si lattice within approximately 1 nm of a …
Conductivity and size quantization effects in semiconductor -layer systems
We present an open-system quantum-mechanical 3D real-space study of the conduction
band structure and conductive properties of two semiconductor systems, interesting for their …
band structure and conductive properties of two semiconductor systems, interesting for their …
Electric current paths in a Si: P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy
The recently-developed ability to control phosphorous-doping of silicon at an atomic level
using scanning tunneling microscopy, a technique known as atomic precision advanced …
using scanning tunneling microscopy, a technique known as atomic precision advanced …
Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication
TJZ Stock, O Warschkow, PC Constantinou… - Advanced …, 2024 - Wiley Online Library
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal
hold promise to provide novel materials with tailored electronic, magnetic, and optical …
hold promise to provide novel materials with tailored electronic, magnetic, and optical …
Si epitaxy on Cl-Si (100)
A Farzaneh, RE Butera - Applied Surface Science, 2022 - Elsevier
Current atomically-precise fabrication methods in Si utilize a scanning tunneling microscope
(STM) to pattern a monatomic resist adsorbed on Si (100). Recent interest in the use of Cl …
(STM) to pattern a monatomic resist adsorbed on Si (100). Recent interest in the use of Cl …