A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Record-high electron mobilities were achieved for silicon-doped (010) β-Ga 2 O 3
homoepitaxial films grown via metalorganic chemical vapor deposition (MOCVD). Key …
homoepitaxial films grown via metalorganic chemical vapor deposition (MOCVD). Key …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
[PDF][PDF] Gallium OXIDE: Properties and applica 498 a review
Gallium oxide has attracted a considerable interest as a functional material for various
applications. This review summarizes the research work carried out in the field of gallium …
applications. This review summarizes the research work carried out in the field of gallium …
Intrinsic electron mobility limits in β-Ga2O3
By systematically comparing experimental and theoretical transport properties, we identify
the polar optical phonon scattering as the dominant mechanism limiting electron mobility in …
the polar optical phonon scattering as the dominant mechanism limiting electron mobility in …
Anisotropic thermal conductivity in single crystal β-gallium oxide
The thermal conductivities of β-Ga 2 O 3 single crystals along four different crystal directions
were measured in the temperature range of 80–495 K using the time domain …
were measured in the temperature range of 80–495 K using the time domain …
Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
T Onuma, S Saito, K Sasaki, T Masui… - Japanese Journal of …, 2015 - iopscience.iop.org
The polarized transmittance and reflectance spectra of β-Ga 2 O 3 crystals are investigated,
and the data are interpreted in terms of the monoclinic crystal band structure. The energies …
and the data are interpreted in terms of the monoclinic crystal band structure. The energies …