This article reviews the materials science of graphene grown epitaxially on the hexagonal
basal planes of SiC crystals and progress toward the deterministic manufacture of graphene …

Stacking engineering in van der Waals (vdW) materials is a powerful method to control
topological electronic phases for quantum device applications. Atomic intercalation into the …

The electronic structure of graphene on Cu (111) and Cu (100) single crystals is investigated
using low-energy electron microscopy, low-energy electron diffraction, and angle-resolved …

We report spectroscopy results from the mid-to far-infrared on wafer-scale graphene, grown
either epitaxially on silicon carbide or by chemical vapor deposition. The free carrier …

Boundaries, including phase boundaries, grain boundaries, and domain boundaries, are
known to have an important influence on material properties. Here, dark-field (DF) …

High-resolution transmission electron microscopy has revealed the formation process of
graphene layers on SiC (0001). Initially, nucleation occurs at SiC steps, covering them with a …

We review our research towards single-crystal growth of epitaxial few-layer graphene (FLG)
on SiC substrates. We have established a method for evaluating the number of graphene …

Epitaxial graphene is formed on vicinal SiC (0001) surfaces via high temperature annealing
in vacuum. Steps act as a significant “kicker” of graphene nucleation to feed C atoms. At …

Graphene and related two-dimensional (2D) materials are attracting huge attention due to
their wide-range potential applications. Because large-scale, high-quality 2D crystals are …

Previous experimental observations motivate clarification of configuration stabilities and
kinetic processes for intercalation of guest atoms into a layered van der Waals material such …