Modern mobile communication signals require power amplifiers able to maintain very high
efficiency in a wide range of output power levels, which is a major issue for classical power …

A new design methodology providing optimal mixed-mode operation for dual-input class-F
outphasing Chireix amplifiers is presented. The design starts with single-transistor class-F …

The term waveform engineering denotes all those circuit design techniques that are based
on shaping the transistor voltage and current waveforms. From a general perspective, these …

A modulation-doped field-effect transistor (MODFET) has been investigated in this paper. It
is also called HEMT (high electron mobility transistor). The proposed MODFET is made up of …

We present the first application of the recently introduced dynamic-bias measurement to the
acquisition of the scattering (S-) parameters of microwave transistors under large signal …

This paper presents a groundbreaking Ku-band 20W RF front-end power amplifier (PA),
designed to address numerous challenges encountered by satellite communication …

Model-based nonlinear embedding is applied for the first time to the design of an
asymmetrically-driven class-F Chireix power amplifier (PA). The embedding model of a 15 W …

This paper presents a novel comprehensive model for analyzing devices at the W-band and
beyond. The presented simulation scheme makes this physics-based model suitable for …

An innovative design methodology is presented to simplify the architecture of outphasing
power amplifier (PA). The proposed design, by absorbing transistor parasitic capacitance …

In this paper, a novel hybrid‐scaling rule for GaN high‐electron‐mobility transistors (HEMTs)
scalable large‐signal model with self‐heating effect is proposed. Due to the complex …