A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …

This work investigates the transition from digital to gradual or analog resistive switching in
yttrium oxide‐based resistive random‐access memory devices. It is shown that this transition …

Very often researchers in the field of resistive switching devices or memristors need to model
their experimental data using a compact representation without dealing with the …

A memory state equation consistent with a number of experimental observations is
presented and discussed within the framework of Chua's memristive systems theory. The …

The quantum nature of filamentary-type resistive switching (RS) occurring in thin oxide films
has been investigated for more than two decades and though the key concepts for a …

Tuning the conductance of a memristive device is a process that requires energy and
involves power dissipation. In this letter, the role the memory state programming strategy …

Since the dawn of the information age, all developments that provided a significant
improvement in information processing and data transmission have been considered as key …

According to some analysts, the information revolution responsible for the unprecedentedly
fast technological development of last decades is about to give way to the “Neuromorphic …