Modeling single event transients in advanced devices and ICs

L Artola, M Gaillardin, G Hubert… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
The ability for Single Event Transients (SETs) to induce soft errors in Integrated Circuits (ICs)
was predicted for the first time by Wallmark and Marcus in the early 60's and was confirmed …

[PDF][PDF] Technology scaling and soft error reliability

LW Massengill, BL Bhuva… - 2012 IEEE …, 2012 - reliablemicrosystems.com
Technology Scaling and Soft Error Reliability Page 1 Technology Scaling and Soft Error
Reliability Lloyd W. Massengill Professor, Department of Electrical Engineering and Computer …

Single-event transient modeling in a 65-nm bulk CMOS technology based on multi-physical approach and electrical simulations

G Hubert, L Artola - IEEE Transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
This paper presents a SET predictive methodology based on coupled MUSCA SEP3 and
electrical simulations (CADENCE tool). The method is validated by SET measurements on …

Layout-based modeling and mitigation of multiple event transients

M Ebrahimi, H Asadi, R Bishnoi… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Radiation-induced multiple event transients (METs) are expected to become more frequent
than single event transients (SETs) at nanoscale CMOS technology nodes. In this paper, a …

Novel layout technique for single-event transient mitigation using dummy transistor

J Chen, S Chen, Y He, J Qin, B Liang… - … on Device and …, 2012 - ieeexplore.ieee.org
In this paper, a novel layout technique for single-event transient (SET) mitigation based on
dummy transistors is proposed. Numerical simulations using technology computer-aided …

Simulation study of the layout technique for P-hit single-event transient mitigation via the source isolation

J Chen, S Chen, B Liang, B Liu - IEEE Transactions on Device …, 2012 - ieeexplore.ieee.org
In this paper, a layout technique for P-hit single-event transient (SET) mitigation via source
isolation is studied by way of technology-computer-aided-design numerical simulations. The …

Single event soft error in advanced integrated circuit

Y Zhao, S Yue, X Zhao, S Lu, Q Bian… - Journal of …, 2015 - iopscience.iop.org
As technology feature size decreases, single event upset (SEU), and single event transient
(SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU)(or multi cell …

A novel layout-based single event transient injection approach to evaluate the soft error rate of large combinational circuits in complimentary metal-oxide …

Y Du, S Chen - IEEE Transactions on Reliability, 2015 - ieeexplore.ieee.org
As the technology scales down, space radiation induced soft errors are becoming a critical
issue for the reliability of Integrated Circuits (ICs). In this paper, we propose a novel layout …

Novel layout technique for N-hit single-event transient mitigation via source-extension

J Chen, S Chen, Y He, Y Chi, J Qin… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
In this paper, a novel layout technique for N-hit single-event transient (SET) mitigation that is
based on source-extension is proposed. Based on 65 nm bulk CMOS technology, both …

Effect of transistor density and charge sharing on single-event transients in 90-nm bulk CMOS

NM Atkinson, JR Ahlbin, AF Witulski… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
Heavy-ion experiments on spatially isolated inverters and densely populated inverters
demonstrate the effects of transistor density on single-event (SE) transients in bulk CMOS …