A complete analysis of low-noise 0.1/spl mu/m gate AlInAs-GaInAs HEMT's has been
performed by using a semiclassical Monte Carlo simulation. The validity of the model has …

The static and dynamic behavior of InAlAs/InGaAs double-gate high-electron mobility
transistors (DG-HEMTs) is studied by means of an ensemble 2-D Monte Carlo simulator. The …

In this paper, we propose a laterally graded-channel pseudo-junctionless (GPJL) MOSFET
for analog/RF applications. We examine the dynamical performance of GPJL MOSFET and …

A microscopic study of 0.1 µm recessed gate-doped AlInAs/GaInAs HEMTs has been
performed by using a semiclassical Monte Carlo device simulation. The geometry and layer …

A comprehensive RF analysis technique based on ensemble Monte Carlo (EMC) simulation
of compound FET's with realistic device geometry is presented. Y-parameters are obtained …

In this paper, an ensemble 2D bipolar Monte Carlo simulator is employed for the study of
static characteristics, high-frequency response and noise behaviour in a 0.3 µm gate-length …

By using a Monte Carlo simulator, the static and dynamic characteristics of 50-nm-gate
AlInAs-GaInAs/spl delta/-doped high-electron mobility transistors (HEMTs) are investigated …

An integrated multibias extraction technique for MESFET and high electron-mobility
transistor (HEMT) models is presented in this paper. The technique uses S-parameters …

The dynamic characteristics and high‐frequency noise performance of junctionless (JL)
metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) are investigated using a full …

The noise performance of InAlAs/InGaAs double-gate (DG) and standard high-electron-
mobility transistors (HEMTs) is analyzed by means of an ensemble 2-D Monte Carlo …