New DDSCR structure with high holding voltage for robust ESD applications
ZJ Zhou, XL Jin, Y Wang, P Dong - Chinese Physics B, 2021 - iopscience.iop.org
A novel dual direction silicon-controlled rectifier (DDSCR) with an additional P-type doping
and gate (APGDDSCR) is proposed and demonstrated. Compared with the conventional …
and gate (APGDDSCR) is proposed and demonstrated. Compared with the conventional …
Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures
JX Wang, XJ Li, FZ Zhao, CB Zeng, DL Li… - Chinese …, 2021 - iopscience.iop.org
Trigger characteristics of electrostatic discharge (ESD) protecting devices operating under
various ambient temperatures ranging from 30 C to 195 C are investigated. The studied ESD …
various ambient temperatures ranging from 30 C to 195 C are investigated. The studied ESD …
A novel percolation model of leakage fluctuation behavior in gate-control dual-direction silicon controlled rectifier
Z Zhong, Y Wang, X Jin, Y Peng, J Luo… - Microelectronics Reliability, 2021 - Elsevier
Gate structures are used as efficient auxiliary components to improve the electrostatic
discharge (ESD) performance of traditional silicon controlled rectifiers (SCRs). However, it …
discharge (ESD) performance of traditional silicon controlled rectifiers (SCRs). However, it …
Analysis of current aggregation in gate-control dual direction silicon controlled rectifier
Z Zhong, Y Wang, X Jin, Y Peng, J Luo… - IEICE Electronics …, 2021 - jstage.jst.go.jp
The current aggregation mechanism created by the gate structure is proposed for
electrostatic discharging (ESD). Through device simulation, the size-expanded gate …
electrostatic discharging (ESD). Through device simulation, the size-expanded gate …