This paper surveys, reviews, and critiques analytic models of MOSFET short-channel effects
(SCEs) in subthreshold published over the past four decades. In the first half of this paper …

The goals and constraints of MOSFET scaling are reviewed, and the role of reliability
constraints is highlighted. It is concluded that judicial shrinking of MOSFET device …

Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated
Circuits takes students in integrated-circuits courses from fundamental physics to detailed …

The analysis and prediction of nonlinear behavior in electronic circuits has long been a topic
of concern for analog circuit designers. The recent explosion of interest in portable …

A simple one-flux scattering theory of the silicon MOSFET is introduced. Current-voltage (IV)
characteristics are expressed in terms of scattering parameters rather than a mobility. For …

This paper examines the apparent limits, possible extensions, and applications of CMOS
technology in the nanometer regime. Starting from device scaling theory and current industry …

The selection of drain current, inversion coefficient, and channel length for each MOS device
in an analog circuit results in significant tradeoffs in performance. The selection of inversion …

Dynamic voltage scaling (DVS) reduces the power consumption of processors when peak
performance is unnecessary. However, the achievable power savings by DVS alone is …

We derive a new scale length for two-dimensional (2-D) effects in MOSFETs and discuss its
significance. This derivation properly takes into account the difference in permittivity …

Technology scaling demands a decrease in both Vdd and Vt to sustain historical delay
reduction, while restraining active power dissipation. Scaling of Vt however leads to …