Organic resistive memory devices: performance enhancement, integration, and advanced architectures
In recent years, organic resistive memory devices in which active organic materials possess
at least two stable resistance states have been extensively investigated for their promising …
at least two stable resistance states have been extensively investigated for their promising …
Electrical memory devices based on inorganic/organic nanocomposites
Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have
emerged as excellent candidates for promising applications in next-generation electronic …
emerged as excellent candidates for promising applications in next-generation electronic …
[HTML][HTML] Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
This review presents a summary of current understanding of the resistive switching materials
and devices which have inspired extraordinary interest all over the world. Although various …
and devices which have inspired extraordinary interest all over the world. Although various …
Printed, flexible, organic nano‐floating‐gate memory: Effects of metal nanoparticles and blocking dielectrics on memory characteristics
The effects of using a blocking dielectric layer and metal nanoparticles (NPs) as charge‐
trapping sites on the characteristics of organic nano‐floating‐gate memory (NFGM) devices …
trapping sites on the characteristics of organic nano‐floating‐gate memory (NFGM) devices …
[PDF][PDF] Rewritable switching of one diode-one resistor nonvolatile organic memory devices
Recently, organic electronics including organic light-emitting diodes, transistors, and solar
cells have attracted considerable attention due to a variety of advantages such as …
cells have attracted considerable attention due to a variety of advantages such as …
Direct observation of Ag filamentary paths in organic resistive memory devices
We demonstrate bipolar switching of organic resistive memory devices consisting of
Ag/polymer/heavily‐doped p‐type poly Si junctions in an 8× 8 cross‐bar array structure. The …
Ag/polymer/heavily‐doped p‐type poly Si junctions in an 8× 8 cross‐bar array structure. The …
High performance volatile polymeric memory devices based on novel triphenylamine-based polyimides containing mono-or dual-mediated phenoxy linkages
Two novel functional polyimides (PIs), PI (AAPT-TPA) and PI (APT-TPA), consisting of
electron-donating 4-amino-4′-(p-aminophenoxy)-triphenylamine (AAPT) or 4, 4′-bis (p …
electron-donating 4-amino-4′-(p-aminophenoxy)-triphenylamine (AAPT) or 4, 4′-bis (p …
Synthesis and memory device characteristics of new sulfur donor containing polyimides
The synthesis and memory device characteristics of two new poly [2, 7-bis
(phenylenesulfanyl) thianthrene− hexafluoroisopropylidenediphthalimide](APTT-6FDA) and …
(phenylenesulfanyl) thianthrene− hexafluoroisopropylidenediphthalimide](APTT-6FDA) and …
Organic resistive nonvolatile memory materials
T Lee, Y Chen - MRS bulletin, 2012 - cambridge.org
Resistive memory devices based on organic materials that can be configured to two or more
stable resistance states have been extensively explored as information storage media due …
stable resistance states have been extensively explored as information storage media due …
Nonvolatile electrical switching and write-once read-many-times memory effects in functional polyimides containing triphenylamine and 1, 3, 4-oxadiazole moieties
This work reports the synthesis and characterization of a series of functional aromatic
polyimides (OXTA-PI) s containing triphenylamine and 1, 3, 4-oxadiazole moieties. All the …
polyimides (OXTA-PI) s containing triphenylamine and 1, 3, 4-oxadiazole moieties. All the …