An optical device includes a first transparent substrate having a first transparent electrode
disposed on a surface of the first transparent substrate and a second substrate having a …

When an insulated gate bipolar transistor is incorporated in a drive circuit of a flash lamp, so
that a light emission pattern of the flash lamp is freely defined, a temperature change pattern …

Some embodiments of the present disclosure provide a semiconductor-based photon-
counting sensor comprising a metal-insulator-semiconductor internal photoemission (eg …

A germanium waveguide is formed from a P-type silicon substrate that is coated with a
heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are …

US10342110B1 - Plasma power generator (z-box and z-tower) - Google Patents US10342110B1
- Plasma power generator (z-box and z-tower) - Google Patents Plasma power generator …

A method for processing a substrate includes providing a substrate with a layer including a
material selected from a group consisting of silicon (Si), germanium (Ge) and silicon …

A method of manufacturing a semiconductor device includes determining information that
indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a …

A germanium waveguide is formed from a P-type silicon substrate that is coated with a
heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are …

(57) ABSTRACT A method of doping a silicon-containing material. The method comprises
forming at least one opening in a silicon containing material and conformally forming a …

A method for processing a substrate includes providing a substrate with a layer including a
material selected from a group consisting of silicon (Si), germanium (Ge) and silicon …