In this review we present some of the recent advances in the field of silicon nitride photonic
integrated circuits. The review focuses on the material deposition techniques currently …

Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …

High optical power density of 0.5 mW/cm 2, external quantum efficiency of 0.1%, and
population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide …

Amorphous silicon oxide SiO2 and amorphous silicon nitride Si3N4 are the two key
dielectrics in silicon electronics. Amorphous Si3N4 exhibits a memory effect due to its …

Strong tunable photoluminescence (PL) from silicon oxynitride materials have been
demonstrated by modulating the oxygen content. The increase of oxygen content in the films …

Strong white electroluminescence (EL) from SiN-based devices containing Si nanodots with
a density of more than 4.6× 10^ 12/cm^ 2 was investigated. The white EL illustrates …

We report the effect of barrier layer on the electroluminescence from Si/SiO x N y multilayer
structures, where the SiO x N y barrier layers were modulated by varying the oxygen/nitride …

In integrated photonics, silicon nitride-based devices operating in the visible range of light
may experience auto-fluorescence, an undesired effect that can interfere with the …

We have demonstrated the formation of one-dimensionally aligned self-assembling silicon
quantum dots (Si-QDs) by low-pressure (LP) CVD using pure monosilane (SiH 4) gas …

Рассмотрены и обобщены результаты исследований и разработок в области
формирования контактно-барьерных структур в изделиях субмикронной электроники и …