GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Fabrication of UV photodetector based on GaN/Psi heterojunction using pulse laser deposition method: Effect of different laser wavelengths
In this study, GaN/pSi heterojunction photodetectors were fabricated via pulsed laser
deposition method (PLD). Photoelectrochemical etching method (PECE) with laser aid …
deposition method (PLD). Photoelectrochemical etching method (PECE) with laser aid …
Synthesis of gallium nitride nanostructure using pulsed laser ablation in liquid for photoelectric detector
Gallium nitride (GaN) thin film was grown by Nd: YAG pulsed laser ablation with two laser
ablation energies. The optical band gaps and crystallinities of the specimens were studied to …
ablation energies. The optical band gaps and crystallinities of the specimens were studied to …
Review of GaN optical device characteristics, applications, and optical analysis technology
This scientific paper represents a review of progress and developments which more
concerned in Nanophotonic Gallium nitride. Because of the expansion in modern optical …
concerned in Nanophotonic Gallium nitride. Because of the expansion in modern optical …
From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors
R Yu, G Wang, Y Shao, Y Wu, S Wang… - Journal of Materials …, 2019 - pubs.rsc.org
Porous GaN has many unique merits, such as a large specific surface area, adjustable
bandgap and excellent optical performance. Here, we develop a simple and effective …
bandgap and excellent optical performance. Here, we develop a simple and effective …
Review on nanomaterials synthesized by vapor transport method: growth and their related applications
X Xue, Z Zhou, B Peng, MM Zhu, YJ Zhang, W Ren… - RSC …, 2015 - pubs.rsc.org
Nanostructures with different dimensions, including bulk crystals, thin films, nanowires,
nanobelts and nanorods, have received considerable attention due to their novel …
nanobelts and nanorods, have received considerable attention due to their novel …
Controlled growth of gallium nitride nanowires on silicon and their utility in high performance Ultraviolet‑A photodetectors
S Sankaranarayanan, P Kandasamy, R Raju… - Sensors and Actuators A …, 2021 - Elsevier
Device fabrication using semiconductor nanostructures for detecting ultraviolet (UV)
radiations, especially UV-A (320–400 nm) has received much attention both at laboratory …
radiations, especially UV-A (320–400 nm) has received much attention both at laboratory …
Room-temperature operation of light-assisted NO2 gas sensor based on GaN nanowires and graphene
We report the successful demonstration of a light-assisted NO 2 gas sensor that operates at
room temperature with high response. The gas sensor was fabricated with high-crystalline …
room temperature with high response. The gas sensor was fabricated with high-crystalline …
Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS
GaN has been demonstrated as an important wide-bandgap semiconductor in many
applications, especially in optoelectronic and high-power electronics. Two-dimensional (2D) …
applications, especially in optoelectronic and high-power electronics. Two-dimensional (2D) …
Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
Porous GaN/sapphire substrates have great application potential in the epitaxial growth of
high-quality and low-stress GaN crystals. In this study, the growth behavior of epitaxially …
high-quality and low-stress GaN crystals. In this study, the growth behavior of epitaxially …