Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs
G Paz-Martínez, I Íñiguez-De-La-Torre… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The responsivity of sub-THz zero-bias detectors based on GaN high-electron mobility
transistors (HEMTs) is measured up to 110 GHz. A predictive model based on static …
transistors (HEMTs) is measured up to 110 GHz. A predictive model based on static …