Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …

(Continued)(57) ABSTRACT (51) Int. Cl A field effect transistor includes a body layer having
a ion 39/78(2006.01) strained crystalline semiconductor channel region, and a HOIL …

(57) ABSTRACT A field effect transistor (FET) includes a nanosheet stack having first and
second stacked semiconductor channel layers. The first channel layer defines a channel …

We present electrical characterization of GaSb/InAs (Sb) nanowire tunnel field-effect
transistors. The broken band alignment of the GaSb/InAs (Sb) heterostructure is exploited to …

A figure of merit I 60 is proposed for sub-60 mV/decade devices as the highest current where
the input characteristics exhibit a transition from sub-to super-60 mV/decade behavior. For …

Influence of Gaussian doping in transistor regions, doping gradient step size (σ), interface
trap charges (ITC), and temperature on DC, Analog, and Linearity performance of Ge …