The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays
as device modeling faces new challenges such as short channel effects and mobility …

This paper proposes an analytical threshold voltage model for the dielectric pocket double
gate (DP-DG) junctionless FETs (JLFETs). The channel potential function has been obtained …

The present paper is about using three popular performance boosters in a device to battle
with deterioration in device characteristics imposed by temperature variation. The dielectric …

In this paper, an exhaustive study of DPDG MOSFET for analog/RF performance has been
done. DG MOSFET and DPDG MOSFET are examined through extensive 2D device …

The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide
semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation …

The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide-
semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation …

This paper presents a systematic study on the performance of double gate (DG)-MOSFETs
with an ultrathin embedded dielectric film (DF) at the center of the channel from the source to …

In this work, double gate MOSFET with dielectric pocket has been proposed by incorporating
the concept of gate work function engineering. A comparative analysis of this proposed …

In this paper, Dielectric pocket (DP) based channel region of the junction-less dual material
double gate (JLDMDG) MOSFET is proposed. A comparative analysis of the JLDMDG and …

The transistor is the elementary unit of all the electronic systems. The advancements in the
performance of these systems have changed the world. In the recent years, the development …