Comprehensive review on electrical noise analysis of TFET structures

S Chander, SK Sinha, R Chaudhary - Superlattices and Microstructures, 2022 - Elsevier
Abstract Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for
conventional CMOS due to their advantages like very low leakage current and steep sub …

[图书][B] Fundamentals of tunnel field-effect transistors

S Saurabh, MJ Kumar - 2016 - taylorfrancis.com
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Low-frequency noise analysis and modeling in vertical tunnel FETs with Ge source

FS Neves, PGD Agopian, JA Martino… - … on Electron Devices, 2016 - ieeexplore.ieee.org
This paper presents the low-frequency noise (LFN) behavior of vertical tunnel FETs (TFETs).
The experimental input characteristics with different source compositions (Si and Ge) and …

Temperature dependence of analog performance, linearity, and harmonic distortion for a ge-source tunnel FET

E Datta, A Chattopadhyay, A Mallik… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we report an investigation of the effects of variation in temperature in the range
of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a …

Impact of gate–source overlap on the device/circuit analog performance of line TFETs

A Acharya, AB Solanki, S Glass… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
The gate–source overlap length () in the line tunneling FET (L-TFET) can be used as a
design parameter to improve the analog circuit performance. In this paper, we investigate …

Study of line-TFET analog performance comparing with other TFET and MOSFET architectures

PG Der Agopian, JA Martino, A Vandooren… - Solid-State …, 2017 - Elsevier
In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices,
with different architectures (FinFET and GAA: Gate-All-Around) at both room and high …

Investigation of noise characteristics in gate-source overlap tunnel field-effect transistor

SK Sinha, S Chander, R Chaudhary - Silicon, 2022 - Springer
The analog circuit performance of tunnel field-effect-transistor (TFET) can be improved by
implementing the concept of gate-source overlap. This paper investigates the impact of …

Simulation analysis of noise components in nctfet with ferroelectric layer in gate stack

A Singh, SK Sinha, S Chander - Integrated Ferroelectrics, 2023 - Taylor & Francis
Abstract Tunnel FETs (TFETs) are a strong contender for replacing conventional MOSFETs
in lower power applications due to their low off-state current and sub-threshold swing being …

Analysis of temperature dependent effects on DC, analog/RF and linearity parameters for a delta doped heterojunction vertical tunnel FET

K Vanlalawmpuia, B Bhowmick - Silicon, 2022 - Springer
In this article, using a 3D Technology computer aided design (TCAD) simulator, a systematic
investigation on the effects of temperature variations in the range of 200–400 K on various …

Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data

A de Moraes Nogueira, PG Der Agopian… - Semiconductor …, 2020 - iopscience.iop.org
In this paper operational transconductance amplifiers (OTA) were designed with nanowire
(NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) …