Comprehensive review on electrical noise analysis of TFET structures
Abstract Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for
conventional CMOS due to their advantages like very low leakage current and steep sub …
conventional CMOS due to their advantages like very low leakage current and steep sub …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
Low-frequency noise analysis and modeling in vertical tunnel FETs with Ge source
This paper presents the low-frequency noise (LFN) behavior of vertical tunnel FETs (TFETs).
The experimental input characteristics with different source compositions (Si and Ge) and …
The experimental input characteristics with different source compositions (Si and Ge) and …
Temperature dependence of analog performance, linearity, and harmonic distortion for a ge-source tunnel FET
E Datta, A Chattopadhyay, A Mallik… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article, we report an investigation of the effects of variation in temperature in the range
of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a …
of 300-450 K on the analog performance and harmonic distortion (HD) characteristics of a …
Impact of gate–source overlap on the device/circuit analog performance of line TFETs
A Acharya, AB Solanki, S Glass… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
The gate–source overlap length () in the line tunneling FET (L-TFET) can be used as a
design parameter to improve the analog circuit performance. In this paper, we investigate …
design parameter to improve the analog circuit performance. In this paper, we investigate …
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
PG Der Agopian, JA Martino, A Vandooren… - Solid-State …, 2017 - Elsevier
In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices,
with different architectures (FinFET and GAA: Gate-All-Around) at both room and high …
with different architectures (FinFET and GAA: Gate-All-Around) at both room and high …
Investigation of noise characteristics in gate-source overlap tunnel field-effect transistor
The analog circuit performance of tunnel field-effect-transistor (TFET) can be improved by
implementing the concept of gate-source overlap. This paper investigates the impact of …
implementing the concept of gate-source overlap. This paper investigates the impact of …
Simulation analysis of noise components in nctfet with ferroelectric layer in gate stack
Abstract Tunnel FETs (TFETs) are a strong contender for replacing conventional MOSFETs
in lower power applications due to their low off-state current and sub-threshold swing being …
in lower power applications due to their low off-state current and sub-threshold swing being …
Analysis of temperature dependent effects on DC, analog/RF and linearity parameters for a delta doped heterojunction vertical tunnel FET
K Vanlalawmpuia, B Bhowmick - Silicon, 2022 - Springer
In this article, using a 3D Technology computer aided design (TCAD) simulator, a systematic
investigation on the effects of temperature variations in the range of 200–400 K on various …
investigation on the effects of temperature variations in the range of 200–400 K on various …
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data
A de Moraes Nogueira, PG Der Agopian… - Semiconductor …, 2020 - iopscience.iop.org
In this paper operational transconductance amplifiers (OTA) were designed with nanowire
(NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) …
(NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) …