Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

Copper chalcogenides (CuCh) have attracted considerable attention due to their promising
potential as environmental-friendly photoactive material for lightweight and flexible thin film …

Atomic layer deposition (ALD) can synthesise materials with atomic-scale precision. The
ability to tune the material composition, film thickness with excellent conformality, allow low …

The thickness of the CdS: O window layer plays an important role in CdTe-based thin-film
solar cell performance. Normally with thinner CdS: O layer, the cells' short wavelength …

Thin film solar cells based on Cu (In, Ga) Se 2 (CIGS), where just the buffer layer is changed,
were fabricated and studied. The effects of two different buffer layers, CdS and Zn x Sn 1− x …

Poor qualities of ZnMgO thin films are likely to be obtained at higher Mg content, which can
decrease the performance of ZnMgO-based devices. This study focuses on improving the …

We fabricated Cu (In, Ga) Se2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS
buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell …

Development of Cd-free Cu (In, Ga)(S, Se) 2 (CIGSSe)-based thin-film solar cells fabricated
by an all-dry process is intriguing to minimize optical loss at a wavelength shorter than 520 …

Nowadays, cadmium sulfide (CdS) or zinc oxysulfide (Zn (O, S)) are the traditional buffer
layer of Cu (In, Ga) Se 2 (CIGS) solar cells. However, these buffer layers contain several …

The efficiency of copper indium gallium selenide (CIGS) solar cells that use transparent
conductive oxide (TCO) as the top electrode decreases significantly as the device area …