2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
Tunneling transistors based on graphene and 2-D crystals
D Jena - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
As conventional transistors become smaller and thinner in the quest for higher performance,
a number of hurdles are encountered. The discovery of electronic-grade 2-D crystals has …
a number of hurdles are encountered. The discovery of electronic-grade 2-D crystals has …
Tunnel field-effect transistors: State-of-the-art
H Lu, A Seabaugh - IEEE Journal of the Electron Devices …, 2014 - ieeexplore.ieee.org
Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by
comparing experimental results and theoretical predictions against 16-nm FinFET CMOS …
comparing experimental results and theoretical predictions against 16-nm FinFET CMOS …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …
Tunnel FET technology: A reliability perspective
Abstract Tunneling-field-effect-transistor (TFET) has emerged as an alternative for
conventional CMOS by enabling the supply voltage (V DD) scaling in ultra-low power …
conventional CMOS by enabling the supply voltage (V DD) scaling in ultra-low power …
Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V
Vertical tunnel field-effect transistors (TFETs) in which the gate field is aligned with the
tunneling direction have been fabricated using a novel gate-recess process, resulting in …
tunneling direction have been fabricated using a novel gate-recess process, resulting in …
High-current GaSb/InAs (Sb) nanowire tunnel field-effect transistors
We present electrical characterization of GaSb/InAs (Sb) nanowire tunnel field-effect
transistors. The broken band alignment of the GaSb/InAs (Sb) heterostructure is exploited to …
transistors. The broken band alignment of the GaSb/InAs (Sb) heterostructure is exploited to …
A review of selected topics in physics based modeling for tunnel field-effect transistors
The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
High-performance silicon nanotube tunneling FET for ultralow-power logic applications
HM Fahad, MM Hussain - IEEE transactions on electron devices, 2013 - ieeexplore.ieee.org
To increase typically low output drive currents from tunnel field-effect transistors (FETs), we
show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core …
show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core …