PbS nanostructures: A review of recent advances
Z Mamiyev, NO Balayeva - Materials Today Sustainability, 2023 - Elsevier
The primary motivation behind efforts to understand the properties of lead sulfide (PbS) is its
technological importance as the foundation of modern semiconductor optoelectronics. PbS …
technological importance as the foundation of modern semiconductor optoelectronics. PbS …
Scanning photocurrent microscopy in semiconductor nanostructures
R Graham, D Yu - Modern Physics Letters B, 2013 - World Scientific
Scanning photocurrent microscopy (SPCM) is a powerful experimental tool used to
investigate spatially resolved optoelectronic properties of semiconductors and their …
investigate spatially resolved optoelectronic properties of semiconductors and their …
Hot carrier trapping induced negative photoconductance in InAs nanowires toward novel nonvolatile memory
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide
nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to …
nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to …
Limits of Carrier Diffusion in n-Type and p-Type CH3NH3PbI3 Perovskite Single Crystals
Using a combination of scanning photocurrent microscopy (SPCM) and time-resolved
microwave conductivity (TRMC) measurements, we monitor the diffusion and recombination …
microwave conductivity (TRMC) measurements, we monitor the diffusion and recombination …
Photocurrent mapping in single-crystal methylammonium lead iodide perovskite nanostructures
We investigate solution-grown single-crystal methylammonium lead iodide (MAPbI3)
nanowires and nanoplates with spatially resolved photocurrent mapping. Sensitive …
nanowires and nanoplates with spatially resolved photocurrent mapping. Sensitive …
Spatially Resolved Photoexcited Charge-Carrier Dynamics in Phase-Engineered Monolayer MoS2
A fundamental understanding of the intrinsic optoelectronic properties of atomically thin
transition-metal dichalcogenides (TMDs) is crucial for its integration into high performance …
transition-metal dichalcogenides (TMDs) is crucial for its integration into high performance …
Direct patterning of metal chalcogenide semiconductor materials
W Wang, P Pfeiffer… - Advanced Functional …, 2020 - Wiley Online Library
Lithography is one of the most widely used methods for cutting‐edge research and industrial
applications, mainly owing to its ability to draw patterns in the micro and even nanoscale …
applications, mainly owing to its ability to draw patterns in the micro and even nanoscale …
[HTML][HTML] Quantitative measurement of transport properties: Ag-doped nanocrystalline CdS thin films
This work highlights the transport properties of undoped and Ag doped nc-CdS thin films for
optoelectronic devices. nc-CdS, nc-CdS: Ag 1% and nc-CdS: Ag 5% thin films were …
optoelectronic devices. nc-CdS, nc-CdS: Ag 1% and nc-CdS: Ag 5% thin films were …
Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors
N Ubrig, S Jo, H Berger, AF Morpurgo… - Applied Physics …, 2014 - pubs.aip.org
We perform scanning photocurrent microscopy on WS 2 ionic liquid-gated field effect
transistors exhibiting high-quality ambipolar transport. By properly biasing the gate …
transistors exhibiting high-quality ambipolar transport. By properly biasing the gate …
Gate-dependent carrier diffusion length in lead selenide quantum dot field-effect transistors
We report a scanning photocurrent microscopy (SPCM) study of colloidal lead selenide
(PbSe) quantum dot (QD) thin film field-effect transistors (FETs). PbSe QDs are chemically …
(PbSe) quantum dot (QD) thin film field-effect transistors (FETs). PbSe QDs are chemically …