In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the
research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate …

First-principles calculations have evolved from mere aids in explaining and supporting
experiments to powerful tools for predicting new materials and their properties. In the first …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Attaining control over the electrical conductivity of gallium nitride through impurity doping is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

Application of semiconductors as electric and optoelectronic devices depends critically on
their dopability. Failure to dope a material, ie, to produce enough free charge carriers …

Based on first-principles calculations, a model for large-size-mismatched group-V dopants in
ZnO is proposed. The dopants do not occupy the O sites as is widely perceived, but rather …

Recent advances in the field of nanotechnology have led to the synthesis and
characterization of an assortment of quasi-one-dimensional (Q1D) structures, such as …

The diffusion of relevant native point defects in wurtzite GaN crystals is investigated using
first-principles density-functional pseudopotential calculations. Our reexamination of the …

We have performed density-functional pseudopotential calculations to investigate the
electronic structure, atomic configurations, and formation energies of native point defects …