In recent years, the field of antiferromagnetic spintronics has been substantially advanced.
Electric‐field control is a promising approach for achieving ultralow power spintronic devices …

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …

Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields,–. Different device concepts have …

Magnetic anisotropy and the controllability of the magnetic order of two-dimensional
magnetic materials are of great importance for the development of next-generation …

The emergence of the infinite-layer superconducting nickelate thin films marks the Ni age of
superconductivity, which has excited a huge surge of studies since the first report in August …

Our world is composed of various materials with different structures, where spin structures
have been playing a pivotal role in spintronic devices of the contemporary information …

Cu2S likely plays an important role in the sharp resistivity transition of LK-99. Nevertheless,
this immediately arouses an intriguing question of whether the extraordinary room …

The emergence of embedded magnetic random-access memory (MRAM) and its integration
in mainstream semiconductor manufacturing technology have created an unprecedented …

We report the successful fabrication of noncollinear antiferromagnetic D 019 Mn3Ge thin
films on insulating oxide substrates. The anomalous Hall effect and the large parallel …