The Schottky barrier transistor in emerging electronic devices
This paper explores how the Schottky barrier (SB) transistor is used in a variety of
applications and material systems. A discussion of SB formation, current transport …
applications and material systems. A discussion of SB formation, current transport …
Nanometer-scale Ge-based adaptable transistors providing programmable negative differential resistance enabling multivalued logic
The functional diversification and adaptability of the elementary switching units of
computational circuits are disruptive approaches for advancing electronics beyond the static …
computational circuits are disruptive approaches for advancing electronics beyond the static …
Monolithic and single-crystalline aluminum–silicon heterostructures
Overcoming the difficulty in the precise definition of the metal phase of metal–Si
heterostructures is among the key prerequisites to enable reproducible next-generation …
heterostructures is among the key prerequisites to enable reproducible next-generation …
Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts
Si1− xGex is a key material in modern complementary metal‐oxide‐semiconductor and
bipolar devices. However, despite considerable efforts in metal‐silicide and‐germanide …
bipolar devices. However, despite considerable efforts in metal‐silicide and‐germanide …
Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts
A Fuchsberger, L Wind, M Sistani… - Advanced Electronic …, 2023 - Wiley Online Library
Reconfigurable field‐effect transistors, capable of being dynamically programmed during
run‐time, overcome the static nature of conventional complementary metal‐oxide …
run‐time, overcome the static nature of conventional complementary metal‐oxide …
Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures
Metal‐semiconductor heterostructures providing geometrically reproducible and abrupt
Schottky nanojunctions are highly anticipated for the realization of emerging electronic …
Schottky nanojunctions are highly anticipated for the realization of emerging electronic …
A top‐down platform enabling Ge based reconfigurable transistors
Conventional field‐effect transistor (FET) concepts are limited to static electrical functions
and demand extraordinarily steep and reproducible doping concentration gradients …
and demand extraordinarily steep and reproducible doping concentration gradients …
Catalytic nickel silicide as an alternative to noble metals in metal-assisted chemical etching of silicon
Metal-assisted chemical etching (MACE) has received much attention from researchers
because it can be used to fabricate plasma-free anisotropic etching profiles for …
because it can be used to fabricate plasma-free anisotropic etching profiles for …
Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels
L Wind, R Behrle, MI den Hertog… - Advanced Electronic …, 2024 - Wiley Online Library
In this work, bottom‐up Al–Si–Al nanowire (NW) heterostructures are presented, which act
as a prototype vehicle toward top‐down fabricated nanosheet (NS) and multi‐wire (MW) …
as a prototype vehicle toward top‐down fabricated nanosheet (NS) and multi‐wire (MW) …
Reconfigurable Si field-effect transistors with symmetric on-states enabling adaptive complementary and combinational logic
L Wind, A Fuchsberger, Ö Demirkiran… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Reconfigurable field-effect transistors (RFETs), combining n-and p-type operation in a single
device, have already shown promising simulation results for enhancing performance and …
device, have already shown promising simulation results for enhancing performance and …