The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …

Creating functional electrical circuits using individual or ensemble molecules, often termed
as “molecular-scale electronics”, not only meets the increasing technical demands of the …

High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate
length of 5 nanometers can be fabricated that perform better than silicon complementary …

The allotropes of carbon nanomaterials (carbon nanotubes, graphene) are the most unique
and promising substances of the last decade. Due to their nanoscale diameter and high …

Abstract Two-dimensional (2D) graphene has unique electrical properties such as high
mobility and ballistic transport at room temperature. Two-dimensional hexagonal boron …

Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade
upon exposure to ambient conditions. Atomic force microscopy, electrostatic force …

Nano-bioelectronics represents a rapidly expanding interdisciplinary field that combines
nanomaterials with biology and electronics and, in so doing, offers the potential to overcome …

Transparent conducting films (TCFs) are a critical component in many personal electronic
devices. Transparent and conductive doped metal oxides are widely used in industry due to …