[HTML][HTML] Transversal Displacement Detection of an Arched Bridge with a Multimonostatic Multiple-Input Multiple-Output Radar
Interferometric radars are widely used for monitoring civil structures. Bridges are critical
structures that need to be constantly monitored for the safety of the users. In this work, a …
structures that need to be constantly monitored for the safety of the users. In this work, a …
Design and electrical modelling of a depletion-mode P-type triple-field-plated AlGaN/GaN on SiC HEMT with 2.45 kV breakdown voltage
In this work, we propose a novel triple field-plated high-electron-mobility-transistor (HEMT)
for high power applications, achieving a breakdown voltage of 2449 V. Unique structural …
for high power applications, achieving a breakdown voltage of 2449 V. Unique structural …
[HTML][HTML] 太赫兹混频器噪声系数测量
陶星宇， 刘文杰， 孙粤辉， 秦菲菲， 宋青娥， 赵泽宇… - Chinese …, 2024 - opticsjournal.net
摘要噪声系数是评价高频电子器件传输信号性能的重要参数, 随着工作频率的增加,
高频电子器件的噪声系数通常会增大, 现有噪声源的超噪比无法满足测量需求 …
高频电子器件的噪声系数通常会增大, 现有噪声源的超噪比无法满足测量需求 …
Design of a pHEMT RF mixer based on compact microstrip diplexer
FM Ali - International Journal of Microwave and Wireless …, 2024 - cambridge.org
This paper presents a new topology for a microwave active mixer using compact microstrip
diplexer constituted from two dual-mode open loop resonators. The resonators are tuned to …
diplexer constituted from two dual-mode open loop resonators. The resonators are tuned to …
Exploring Artificial Neural Network for X-Parameter and S-Parameter Modelling of HEMT
Neda, V Nath - International Conference on Human-Centric Smart …, 2023 - Springer
In this research paper, we have explored the efficiency of artificial neural network (ANN) for
the S-parameter and X-parameter modelling of high electron mobility transistors (HEMTs) …
the S-parameter and X-parameter modelling of high electron mobility transistors (HEMTs) …