In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-
based ferroelectric field effect transistor devices for synaptic applications. The devices under …

In this paper, we present a temperature and variability-aware Verilog-A-based compact
model for simulating Ferroelectric FET. The model captures the rich physics of ferroelectric …

The hysteretic character of the electromechanic coupling in porous piezoeceramics is a
fundamental issue to be investigated in order to design porous materials with enhanced …

Instigated by the plethora of data generated by edge devices and IoT devices, machine
learning has become the de facto choice of everyone for solving many tasks. Applications …

The versatility of hafnium oxide-based ferroelectric memories to function as a storage class
memory, a synaptic device for neuromorphic implementation, and a device capable of high …

We report a ferroelectric model based on the Jiles-Atherton equations which can
successfully reproduce the experimental polarization-voltage hysteresis of thin-film hafnium …

The future computing beyond von Neumann era relies heavily on emerging devices that can
extensively harness material and device physics to bring novel functionalities and can …

This article presents a comprehensive physics-based model for back-end-of-line (BEOL)-
compa-tible oxide–semiconductor-based ferroelectric field-effect transistors (FeFETs). The …

Quantum computing, space and coolCMOS applications drive the demand for reliable
embedded non-volatile memories. Here, we demonstrate reliable ferroelectric FETs with 2.3 …

Modern development of electronics and integrated circuits has followed the exponential
Moore's law according to which the size of transistors has also scaled down to the …