In nowadays deeply scaled CMOS technologies, time-dependent variability effects have
become important concerns for analog and digital circuit design. Transistor parameter shifts …

The characterization of the MOSFET Time-Dependent Variability (TDV) can be a
showstopper for reliability-aware circuit design in advanced CMOS nodes. In this work, a …

With nowadays nanometer-CMOS technologies, time-zero and time dependent variability
effects (like BTI, CHI, RTN, TDDB, EM, etc) have turned into an even more serious threat to …

Random Telegraph Noise (RTN) is a stochastic phenomenon which leads to characteristic
variations in electronic devices. Finding features of this signal may result in its modeling and …

In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …

Primer de tot, donar les gracies als meus dos directors, la Dra. Montserrat Nafría Maqueda i
el Dr. Javier Martín Martínez. Ambdós heu sigut una font d'inspiració i us vull comunicar el …

Since the invention in 1960 of the Metal Oxide Semiconductor Field Effect Transistor
(MOSFET), the CMOS semiconductor industry has invariably invented new feats to …

Objectives Within the current landscape of CMOS electronic device research, the
understanding and mitigation of reliability issues play a pivotal role in enhancing their long …