State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Silicon photonic transceivers for application in data centers
H Wang, H Chai, Z Lv, Z Zhang, L Meng… - Journal of …, 2020 - iopscience.iop.org
Global data traffic is growing rapidly, and the demand for optoelectronic transceivers applied
in data centers (DCs) is also increasing correspondingly. In this review, we first briefly …
in data centers (DCs) is also increasing correspondingly. In this review, we first briefly …
A pathway to thin GaAs virtual substrate on on‐axis Si (001) with ultralow threading dislocation density
With recent developments in high‐speed and high‐power electronics and Si‐based
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …
photonic integration, the concept of monolithic III–V/Si integration through epitaxial methods …
Continuous-wave electrically pumped 1550?? nm lasers epitaxially grown on on-axis (001) silicon
Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …
substrates is highly desirable for large-scale electronic and photonic integrated circuits …
Telecom InGaAs/InP quantum well lasers laterally grown on silicon-on-insulator
To achieve on-chip lasers for Si-photonics, monolithic integration using selective epitaxy is a
favorable option due to the unique defect engineering and resultant bufferless structure …
favorable option due to the unique defect engineering and resultant bufferless structure …
[HTML][HTML] Defect engineering for high quality InP epitaxially grown on on-axis (001) Si
Heteroepitaxy of indium phosphide (InP) and its lattice-matched alloys on silicon (Si) show
great promise for Si-based optoelectronic devices and photonic integrated circuits. Here, we …
great promise for Si-based optoelectronic devices and photonic integrated circuits. Here, we …
Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001)
Monolithic integration of III–V materials and devices on CMOS compatible on‐axis Si (001)
substrates enables a route of low‐cost and high‐density Si‐based photonic integrated …
substrates enables a route of low‐cost and high‐density Si‐based photonic integrated …
Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board
F Zubov, M Maximov, E Moiseev, A Vorobyev… - Optics Letters, 2021 - opg.optica.org
We study the impact of improved heat removal on the performance of InGaAs/GaAs
microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial …
microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial …
Epitaxial GaSb films directly grown on on-axis Si (001) with low defect density by MBE
In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the
operating wavelength range into mid-infrared and high-mobility applications, such as free …
operating wavelength range into mid-infrared and high-mobility applications, such as free …
Coalescence of GaP on V-Groove Si Substrates
Here, we study the morphology and dislocation dynamics of metalorganic vapor phase
epitaxy (MOVPE)-grown GaP on a V-groove Si substrate. We show that Si from the substrate …
epitaxy (MOVPE)-grown GaP on a V-groove Si substrate. We show that Si from the substrate …