[HTML][HTML] Combinatorial ALD for the growth of ZnO/TiO 2 nanolaminates and mixed ZnO/TiO 2 nanostructured films
In this study, combinatorial atomic layer deposition (C-ALD) has been used to deposit
layered ZnO and TiO2 nanolaminates on both oxide-covered Si (100) wafers and glass …
layered ZnO and TiO2 nanolaminates on both oxide-covered Si (100) wafers and glass …
Analysis of the successive breakdown statistics of multilayer Al2O3/HfO2 gate stacks using the time-dependent clustering model
The successive oxide failure statistics theory that arises from the clustering model is used for
investigating the time-to-breakdown distributions of Al 2 O 3/HfO 2-based nanolaminates …
investigating the time-to-breakdown distributions of Al 2 O 3/HfO 2-based nanolaminates …
Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks
A simple function-fit model is proposed for the rate of conducting filament generation in Al 2
O 3/HfO 2-based multilayer stacks subjected to a constant voltage stress. During …
O 3/HfO 2-based multilayer stacks subjected to a constant voltage stress. During …
[图书][B] Analysis and modeling of filamentary conduction in Hf0₂-based structures
A Rodríguez Fernández - 2018 - ddd.uab.cat
We are currently facing a revolution in the fields of microelectronics and information
technologies that will surely affect our way of life in the years to come. In this regard, the …
technologies that will surely affect our way of life in the years to come. In this regard, the …