Abstract In this work, Al/Al 2 O 3/Ge/p-Si heterostructures were fabricated by e-beam thermal
evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the …

In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor
(HEMT) device is presented. Drain-current dispersion effects are investigated when gate or …

AlGaN/GaN high electron mobility transistor (HEMT) device operation was modeled from the
sub-micrometer scale to the substrate using a combination of an electro-thermal device …

In this letter, the interface traps of Al2O3/AlGaN/GaN metal-oxide-semiconductor high-
electronmobility transistors (MOS-HEMTs) were characterized quantitatively by dynamic …

A thermal model based on the polynomial relationship of ns and EF is presented. The effect
of temperature rise due to self-heating is studied on various parameters viz. polarization …

In this study, both the Au/(pure-PVA)/n-Si (MPS-1) and Au/(CdTe: PVA)/n-Si (MPS-2) type
Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After …

We investigate high electron mobility transistors (HEMT's) based on AlGaN/GaN grown by
molecular beam epitaxy on Silicon substrates. The improvement of the performances of such …

Sub-bandgap optical pumping with wavelengths of 671, 532, or 447 nm was employed to
study traps in AlGaN/GaN high electron mobility transistors. The trap energies were …

In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-
electron-mobility-transistors (HEMTs) passivated by amorphous-SiN x and monocrystal-like …

An analysis of frequency dispersion in capacitance and conductance of gate‐source contact
of AlGaN/GaN HEMT was performed. Capacitance and conductance were measured at …