This review article presents a comparative study of different silicon-based ultraviolet (UV)
photodetector technologies. After a brief introduction and classification of UV photodetectors …

In this paper, an ultraviolet light (UV-light) sensitive and highly robust Si photodiode
technology based on atomically flattened Si surface is summarized and its application to a …

Detection of Optical Signals provides a comprehensive overview of important technologies
for photon detection, from the X-ray through ultraviolet, visible, infrared to far-infrared …

This work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN
photodiodes. Measurements performed on fabricated devices show a fivefold improvement …

The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in
relationship to the thermal processing used after formation of the PureB chemical-vapor …

The structure and performances of a CMOS image sensor fabricated by integrating
technologies in a series of process flow that achieve wide spectral response, high …

In extreme-ultraviolet (EUV)-based applications, such as next-generation EUV lithography,
the detector surface has to be periodically exposed to aggressive gasses as a cleaning step …

Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space,
environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole …

In this work, n+ pn-type photodiodes with various surface n+ layer profiles formed on the
atomically flat Si surface were evaluated to investigate the relationships between the surface …

We report on the fabrication of extreme ultraviolet (EUV) hybrid imagers with backside-
illuminated detector chip based on aluminum gallium nitride (AlGaN) layers grown on silicon …