Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications

F Zahoor, TZ Azni Zulkifli, FA Khanday - Nanoscale research letters, 2020 - Springer
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

Memristors for energy‐efficient new computing paradigms

DS Jeong, KM Kim, S Kim, BJ Choi… - Advanced Electronic …, 2016 - Wiley Online Library
In this Review, memristors are examined from the frameworks of both von Neumann and
neuromorphic computing architectures. For the former, a new logic computational process …

Artificial synapses emulated by an electrolyte‐gated tungsten‐oxide transistor

JT Yang, C Ge, JY Du, HY Huang, M He… - Advanced …, 2018 - Wiley Online Library
Considering that the human brain uses≈ 1015 synapses to operate, the development of
effective artificial synapses is essential to build brain‐inspired computing systems. In …

Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses

A Serb, J Bill, A Khiat, R Berdan, R Legenstein… - Nature …, 2016 - nature.com
In an increasingly data-rich world the need for developing computing systems that cannot
only process, but ideally also interpret big data is becoming continuously more pressing …

Nanoelectronics Using Metal–Insulator Transition

YJ Lee, Y Kim, H Gim, K Hong, HW Jang - Advanced Materials, 2024 - Wiley Online Library
Metal–insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive
change in Mott insulators has attracted tremendous interest for investigation into next …

Nanoionics‐enabled memristive devices: strategies and materials for neuromorphic applications

Z Wang, L Wang, M Nagai, L Xie, M Yi… - Advanced Electronic …, 2017 - Wiley Online Library
Memristors have been intensively studied in recent years as potential building blocks for the
construction of versatile neuromorphic architectures. The prevalent developments focus on …

Synaptic metaplasticity realized in oxide memristive devices.

ZH Tan, R Yang, K Terabe, XB Yin… - … (Deerfield Beach, Fla.), 2015 - europepmc.org
Metaplasticity, a higher order of synaptic plasticity, as well as a key issue in neuroscience, is
realized with artificial synapses based on a WO3 thin film, and the activity-dependent …

A CMOS Spiking Neuron for Brain-Inspired Neural Networks With Resistive Synapses and In Situ Learning

X Wu, V Saxena, K Zhu… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Nanoscale resistive memory devices are expected to fuel dense integration of electronic
synapses for large-scale neuromorphic systems. To realize such a brain-inspired computing …

Perspective on nanofluidic memristors: from mechanism to application

B Xie, T Xiong, W Li, T Gao, J Zong… - Chemistry–An Asian …, 2022 - Wiley Online Library
Nanofluidic memristors are memory resistors based on nanoconfined fluidic systems
exhibiting history‐dependent ion conductivity. Toward establishing powerful computing …

Resistive random access memory for future information processing system

H Wu, XH Wang, B Gao, N Deng, Z Lu… - Proceedings of the …, 2017 - ieeexplore.ieee.org
Resistive random access memory (RRAM) is regarded as one of the most promising
emerging memory technologies for next-generation embedded, standalone nonvolatile …