In this work, we develop and study single-photon sources based on InGaAs quantum dots
(QDs) emitting in the telecom O-band. Quantum devices are fabricated using in situ electron …

Single-photon sources are key building blocks in most of the emerging secure
telecommunication and quantum information processing schemes. Semiconductor quantum …

So far, successful focused ion beam (FIB) based fabrication of photonic structures with
quantum dots (QDs) has been limited to cases with above 1 µm thick cap, usually in a form …

We demonstrate experimental results based on time-resolved photoluminescence
spectroscopy to determine the oscillator strength and the internal quantum efficiency (IQE) of …

We calculate the spectrum of excited exciton states in application-relevant self-assembled
pyramidal quantum dots grown in InAs/InP and InAs/AlGaInAs material systems. These types …

In the present work, we focus on the development and optimization of the photonic structures
fabrication with (In, Ga) As/GaAs quantum dots as an active part. Such structures offer the …

Single InP-based quantum dots emitting in the third telecom window are probed quasi-
resonantly in polarization-resolved microphotoluminescence experiments. For charged …

A semiconductor heterostructure made with two asymmetric coupled self-assembled
quantum dots (ACSAQDs) has been studied. Such a structure can serve as a spin based …