Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …

To fully exploit the potential advantages of ideal quantum dots (QDs)(ie full 3D carrier
confinement), elimination of the wetting layer and a uniform monomodal QD size distribution …

Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …

Silicon photonics is a rapidly developing technology that promises to revolutionize the way
we communicate, compute, and sense the world. However, the lack of highly scalable …

The carrier losses due to radiative recombination in monolayer transition metal
dichalcogenides are studied using fully microscopic many-body models. The density-and …

Nowadays, strained quantum structures have been widely used in various light-emitting
devices with a variety of compounds for progressive applications. However, the lattice …

We investigate the deep-UV optical emission and gain properties of Al x Ga 1− x N/Al y Ga
1− y N multiple quantum wells structures. These structures were grown by plasma-assisted …

It is well-known that thermal detuning between the gain peak and the cavity mode always
occurs and leads to considerable gain loss in single-frequency laser diodes. For this issue …

Modal absorptions in laser-like heterostructures containing InAs self-assembled quantum
dots (QDs) and InGaAs quantum well-dots (QWDs) have been studied. The evaluation of …

We have calculated the optical gain spectra in unstrained graded GaAs/AlxGa1− xAs single
quantum well lasers as a function of the energy of the radiation, the quantum well width and …