[PDF][PDF] Performance analysis of CNTFET and MOSFET focusing channel length, carrier mobility and ballistic conduction in high speed switching

MA Kabir, T Nandy, MA Haque, A Dutta… - International Journal of …, 2014 - academia.edu
Enhancement of switching in nanoelectronics, Carbon Nano Tube (CNT) could be utilized in
nanoscaled Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this review, we …

On the design of robust, low power with high noise immunity quaternary circuits

A Doostaregan, A Abrishamifar - Microelectronics Journal, 2020 - Elsevier
In this paper a design for Standard Quaternary Inverter (SQI) in Carbon Nanotube Field-
Effect-Transistor (CNFET) technology is proposed. The proposed design is evaluated and …

DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor

BG Shohany, MR Roknabadi, A Kompany - Computational Materials …, 2018 - Elsevier
The chemical stability of graphene and graphdiyne means that they can be stacked in
different combinations to produce a new nanotransistor for ultra-high frequency applications …

Performance analysis of an efficient MAC unit using CNTFET technology

KV Karthikeyan, R Babu, N Mathan… - Materials Today …, 2016 - Elsevier
Abstract Interpretation of low power MAC unit (Multiplier Accumulator) is pivotal for the
design of VLSI (Very Large Scale Integration) architecture. As Metal Oxide Semiconductor …

[PDF][PDF] Single Event Upset Detection and Hardening schemes for CNTFET SRAM-A Review.

TR Rajalakshmi, R Sudhakar - Journal of Engineering Science & …, 2015 - researchgate.net
Carbon nanotubes (CNT) provide a better alternative of silicon, when it comes to nano
scales. Thanks to its high stability and high performance of carbon nanotube, CNT based …

[PDF][PDF] Performance Analysis of Universal Filter Using CNTFET

D Rana, T Choudari - Citeseer
In this paper the performance is analyzed of universal filter which is designed using DDCC
based on CNTFET technology. This filter contains three output and four input terminals …

[PDF][PDF] CARBON NANOTUBE FIELD-EFFECT TRANSISTOR FOR A LOW NOISE AMPLIFIER

N SIANG - 2015 - eprints.utm.my
The demand for low power front-end receiver which works at ZigBee Standard had
increased because it helps to increase the battery life and ZigBee Standard is used by many …

[PDF][PDF] To Study Effect on Current Due to Channel Length Variation

A Kumar, A Rai, RK Saxena… - International …, 2014 - pdfs.semanticscholar.org
There are two primary device structures that have being widely used. One is the bulk
structure, where a transistor is directly fabricated on the semiconductor substrate. The other …

[PDF][PDF] Comparison of CNTFET based 6T SRAM and MOSFET based 6T SRAM using Hspice.

DV Gohil, JR Patel, NR Shah - Citeseer
The basic VLSI (Very Large Scale Integration) circuit element is Metal Oxide Semiconductor
Field Effect Transistor (MOSFET). Moore's law states that, design performance improves by …

[PDF][PDF] Hspice Simulation of D Latch and Double Edge Triggered Flip-Flop Using CNTFET

AT Limda - 2014 - Citeseer
The basic VLSI (Very Large Scale Integration) circuit element is Metal Oxide Semiconductor
Field Effect Transistor (MOSFET). Moore's law states that, design performance improves by …