We present the effect of interface quality on the performance of InAsSb based hetero ni-p
middle wavelength infrared (MWIR) photodiodes. By adopting heavily doping wide bandgap …

InSbN alloys are fabricated by two-step nitrogen ion implantation into InSb (111) wafers. X-
ray photoelectron spectroscopy indicates that most of the implanted nitrogen ions substitute …

InSbN pn junctions prepared by N^ sup+^ and Mg^ sup+^ implantation into InSb wafers for
long wavelength infrared photodetection are demonstrated for the first time. The detection …

The effect of the intense laser field on the intersubband optical absorption for (1–2) transition
in a Ga1− xInxNyAs1− y/GaAs single quantum well for different nitrogen and indium …

Antimonide based III–V materials have been attracting great attention as they have wide
applications covering photodetection, light source, photovoltaics and electronic devices. In …

We report comprehensive analysis of two-dimensional metallic square-hole array with a
square lattice for surface plasmon enhancement of mid-wavelength infrared photodetection …

We have studied the conduction band electronic level structure of GaInAsN/(Al) GaAs-based
quantum well (QW) infrared photodetectors using intersubband photocurrent (PC) …

The authors report on experimental results of intersubband absorption in a set of Ga 0.77 In
0.23 N 0.01 As 0.99∕ Ga As quantum well structures with different well widths from 2.6 to …

The dependences of intersubband transitions on well width and nitrogen (N) content in n-
type In 0.23 Ga 0.77 As 1− x N x/GaAs quantum wells (QWs) are investigated using a ten …

We report on a room temperature polarization-independent intersubband photocurrent (PC)
in quantum-well infrared photodetector based on a GaInAsN/GaAs standard multiple …