Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4
S Ozaki, KI Muto, H Nagata, S Adachi - Journal of applied physics, 2005 - pubs.aip.org
Optical-absorption and photoluminescence (PL) spectra have been measured on the defect-
chalcopyrite-type semiconductor Cd Ga 2 Te 4 in the 0.9–1.5‐eV photon-energy range at …
chalcopyrite-type semiconductor Cd Ga 2 Te 4 in the 0.9–1.5‐eV photon-energy range at …
Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers
Much research has been devoted to the incorporation of erbium (Er) into semiconductors
aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to …
aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to …
Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor
S Ozaki, S Boku, S Adachi - Physical Review B, 2003 - APS
Optical absorption and photoluminescence (PL) spectra have been measured on the defect-
chalcopyrite-type semiconductor ZnIn 2 Te 4 in the 1.1–1.6 eV photon-energy range at …
chalcopyrite-type semiconductor ZnIn 2 Te 4 in the 1.1–1.6 eV photon-energy range at …
Er-Doped GaN and InxGa1-xN for Optical Communications
Considerable research effort has been devoted recently to the incorporation of RE ions, in
particular Er3+, into wide bandgap III-nitride semiconductors. Significant progress has been …
particular Er3+, into wide bandgap III-nitride semiconductors. Significant progress has been …
Probing of local alloy disorder in InGaN using Er3+ ions
We report on studies to probe the local lattice disorder in InGaN: Er epilayers using the 1.54
μm emission of Er 3+ ions. The InGaN layers were doped during MOCVD growth with Er to a …
μm emission of Er 3+ ions. The InGaN layers were doped during MOCVD growth with Er to a …
Annealing behavior and lattice site location of Er implanted InGaN
Single crystalline InGaN epilayers with different In content were implanted with Er+ fluences
in the range of 1× 1013–5× 1015 cm− 2 at room temperature. The structural changes and …
in the range of 1× 1013–5× 1015 cm− 2 at room temperature. The structural changes and …
Stability and optical activity of Er implanted MgO
MgO single crystals were implanted with Er ions to a fluence of 5× 1015 ions/cm2. The
implantations were carried out at room temperature with an energy of 150 keV. Despite the …
implantations were carried out at room temperature with an energy of 150 keV. Despite the …
[PDF][PDF] Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers
J Zavada, HX Jiang, JY Lin, A Sedhain, J Li, IW Feng - 2010 - ttu-ir.tdl.org
Much research has been devoted to the incorporation of erbium (Er) into semiconductors
aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to …
aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to …
[引用][C] Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4
O Shunji, M Kei-Ichi, N Hisatoshi, A Sadao - 2005 - American Institute of Physics