Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …
High-k dielectrics for 4H-silicon carbide: present status and future perspectives
A Siddiqui, RY Khosa, M Usman - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Owing to its superior material and electrical properties such as wide bandgap and high
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric
We demonstrated solution-processed thin film transistors on a peroxo-zirconium oxide
(ZrO2) dielectric with a maximum temperature of 350° C. The formation of ZrO2 films was …
(ZrO2) dielectric with a maximum temperature of 350° C. The formation of ZrO2 films was …
Effects of drying temperature and ethanol concentration on bipolar switching characteristics of natural Aloe vera-based memory devices
Extracted, formulated, and processed natural Aloe vera has been used as an active layer for
memory applications. The functional memory device is realized by a bottom-up structure of …
memory applications. The functional memory device is realized by a bottom-up structure of …
Interlayer transition in a vdW heterostructure toward ultrahigh detectivity shortwave infrared photodetectors
Van der Waals (vdW) heterostructures of 2D atomically thin layered materials (2DLMs)
provide a unique platform for constructing optoelectronic devices by staking 2D atomic …
provide a unique platform for constructing optoelectronic devices by staking 2D atomic …
High-mobility and hysteresis-free flexible oxide thin-film transistors and circuits by using bilayer sol–gel gate dielectrics
In this paper, we demonstrate high-performance and hysteresis-free solution-processed
indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) and high-frequency-operating …
indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) and high-frequency-operating …
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power …
In this letter, a bipolar resistive-switching random-access memory (RRAM) in Ni/Si 3 N 4/SiO
2/p+-Si structure and its fabrication process are demonstrated. The proposed device with …
2/p+-Si structure and its fabrication process are demonstrated. The proposed device with …
Structural and insulating behaviour of high-permittivity binary oxide thin films for silicon carbide and gallium nitride electronic devices
High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These
materials have already found application in microelectronics, mainly as gate insulators or …
materials have already found application in microelectronics, mainly as gate insulators or …
An Opto-Electronic HfOx-Based Transparent Memristive Synapse for Neuromorphic Computing System
A Saleem, D Kumar, F Wu, LB Keong… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this study, a transparent bilayer memristor showing both electrical and optical synapses
along with good electrical properties after annealing is presented. In addition to 85 …
along with good electrical properties after annealing is presented. In addition to 85 …
Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors
The HfO 2 high-k thin films have been deposited on p-type (1 0 0) silicon wafer using RF
magnetron sputtering technique. The XRD, AFM and Ellipsometric characterizations have …
magnetron sputtering technique. The XRD, AFM and Ellipsometric characterizations have …