This paper reviews the state of the art of directly driven proportional directional hydraulic
spool valves, which are widely used hydraulic components in the industrial and …

This work investigates the influence of residual stress on the performance of InGaN-based
red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers …

GaN-based high-power wide-bandgap semiconductor electronics and photonics have been
considered as promising candidates to replace conventional devices for automotive …

Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to
improve thermal management in lateral devices; however, engineering challenges remain …

As semiconductor devices based on silicon reach their intrinsic material limits, compound
semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high …

In this study, various thermal characterization techniques and multi-physics modeling were
applied to understand the thermal characteristics of GaN vertical and quasi-vertical power …

Radiation effects have a critical impact on the reliability of SiC and GaN power electronics
and must be understood for space and avionics applications involving exposure to various …

Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to
analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors …

Owing to its exceptional physical and electronic properties, gallium nitride (GaN) is a
promising material that can find application in the fields of high-power and high-frequency …