Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping
T Vaněk, V Jarý, T Hubáček, F Hájek, K Kuldova… - Journal of Alloys and …, 2022 - Elsevier
A huge acceleration of the yellow band defect luminescence (YB) with increasing Si and Ge
doping concentration in GaN layers has been observed and studied. The donor doping …
doping concentration in GaN layers has been observed and studied. The donor doping …
Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
Abstract Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping
levels were deposited via metal-organic chemical vapor deposition. The impact of the …
levels were deposited via metal-organic chemical vapor deposition. The impact of the …
Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation
Z Zhao, F Xue, P Zhao, Y Lu… - … Science and Technology, 2022 - iopscience.iop.org
Impurity doping is one of the important means to control the physical properties of intrinsic
semiconductors. By combining data mining and first principles calculation, a series of …
semiconductors. By combining data mining and first principles calculation, a series of …
Realization of GaN-based gain-guided blue laser diodes by helium ion implantation
Q Zhang, S Zhang, F Zhang, J Hu, M Feng… - Semiconductor …, 2019 - iopscience.iop.org
The fabrication process and characteristics of gallium nitride (GaN) based gain-guided blue
laser diodes (LDs) are studied, in which an ion implantation process is adopted to confine …
laser diodes (LDs) are studied, in which an ion implantation process is adopted to confine …
Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
O Al-Zuhairi - 2022 - ir.upsi.edu.my
Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were
deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane …
deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane …
Epitaxial Growth of Semi-Polar (11-22) Gallium Nitride for UV Photosensing Application
AHM Ahmad - 2020 - search.proquest.com
Abstract Semi-polar (11-22) gallium nitride (GaN) epilayers have attracted numerous
interests in GaN based technology as it possess significant advantages over its polar (c …
interests in GaN based technology as it possess significant advantages over its polar (c …
Crystal Quality Enhancement of Semi-Polar (11-22) InGaN/GaN-Based Led Grown on M-Plane Sapphire Substrate Via MOCVD
OA Fadhil - 2019 - search.proquest.com
Gallium nitride (GaN) thin films grown along c-plane (polar) direction are extensively
employed for III-nitride based LEDs. However, the wurtzite crystal structure of LEDs grown …
employed for III-nitride based LEDs. However, the wurtzite crystal structure of LEDs grown …
Crystal quality enhancement of semi-polar (11 22) InGaN/GaN-based LED grown on M-Plane sapphire substrate via MOCVD/Omar Ayad Fadhil
F Omar Ayad - 2019 - studentsrepo.um.edu.my
Gallium nitride (GaN) thin films grown along c-plane (polar) direction are extensively
employed for III-nitride based LEDs. However, the wurtzite crystal structure of LEDs grown …
employed for III-nitride based LEDs. However, the wurtzite crystal structure of LEDs grown …