The most fundamental component of the electronics industries is a transistor which is a
semiconductor device. Due to the limitation of SS at 60mv/decade of the MOSFET they were …

For digital applications, researchers are exploring the use of Tunnel Field-Effect Transistors
(TFETs) as an alternative to Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) …

This study examines the operational parameters of field-effect transistors (FETs) using single-
gate (SG) and double-gate (DG) graphene nanoribbons (GNRs) within the analog/RF …

In this letter, a novel ultra-thin finger-like source region-based tunnel field effect transistor
(TFET)(UTS-F-TFET) is used for the implementation of a temperature sensor or resistance …

Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the
design and analysis of advanced field-effect transistor (FET) devices and their applications …

Researchers working with electrical devices face the challenge of developing products that
have higher functionality while consuming a smaller amount of energy. The widespread use …

Researchers working with electronic devices face the challenge of making devices with
greater performance but lower power consumption. Immense usage of electronic products is …

For digital applications, researchers are looking into tunnel field-effect transistors (TFETs) as
a possible substitute for MOSFETs. TFETs offer several unique qualities that can be used in …

In this chapter, an ultra‐thin finger‐like source‐based Tunnel FET (F‐TFET) is demonstrated
for the impact of a change in channel doping level (NC). The change in NC may significantly …

In distinctive for bulk silicon, it becomes exceedingly challenging to devise abrupt
metallurgical pn contacts and to mitigate the SCEs (Short-Channel-Effects) as the physical …