[HTML][HTML] Isotropic atomic layer etching of GaN using SF6 plasma and Al (CH3) 3
NJ Chittock, Y Shu, SD Elliott, H Knoops… - Journal of Applied …, 2023 - pubs.aip.org
GaN is an enabling material for light emitting diodes, advanced radio frequency, and power
semiconductor devices. However, fabrication of GaN devices often relies on harsh etch …
semiconductor devices. However, fabrication of GaN devices often relies on harsh etch …
Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems
L Guan, X Li, C Guo, X Shi, K Xu… - Journal of Vacuum Science …, 2023 - pubs.aip.org
GaN/AlGaN, known as the third-generation semiconductor, is widely used in advanced
power and RF devices. A precise and low-damage etch process is essential for the …
power and RF devices. A precise and low-damage etch process is essential for the …
Atomic layer etching of gallium nitride using fluorine-based chemistry
L Hamraoui, T Zhang, A Crespi… - Journal of Vacuum …, 2023 - pubs.aip.org
Atomic layer etching (ALE) of GaN on silicon substrates has been investigated using fluorine-
based chemistry. The ALE process used for this study consists of a modification step using …
based chemistry. The ALE process used for this study consists of a modification step using …