Infrared measurements are used to assess the measurement accuracy of the peak gate
current (I GPeak) method for Insulated-gate bipolar transistor (IGBT) junction temperature …

The complete replacement of silicon devices with silicon carbide (SiC) devices still faces
many reliability challenges considering higher cost, higher junction temperature, and its …

Junction temperature monitoring is the basis of high reliability for silicon carbide (SiC)
devices since thermal stress is the dominating aging factor. Due to the high switching …

Temperature sensitive electrical parameters (TSEPs) are used to determine the chip
temperature of a single-chip insulated gate bipolar transistors (IGBT) power module by …

Traditionally, power cycling employs only electromechanical induced stress due to the
heating caused by the conduction losses of a power device. Hence, potential failure modes …

Power electronics are widely used in renewable energy systems to achieve lower cost of
energy, higher efficiency and high power density. At the same time, the high reliability of the …

Solder void thermal effects on power module performance and reliability were investigated a
long time ago. The final goal is to determine void acceptability criteria or to remove them …

Today, ThermoSensitive Electrical Parameters (TSEPs) are being investigated in both
academic and industrial works. Nevertheless, in several cases, the temperature evaluation …

The extraction of junction temperature Tj plays a critical role in the IGBT module reliability. In
recent years, the extraction of Tj via parasitic parameters has drawn much attention for its …

Temperature sensitive electrical parameters (TSEPs) allow junction temperature
measurements on power semiconductors without modification to module packaging. The on …