Hardware implementation of neuromorphic computing using large‐scale memristor crossbar arrays
Y Li, KW Ang - Advanced Intelligent Systems, 2021 - Wiley Online Library
Brain‐inspired neuromorphic computing is a new paradigm that holds great potential to
overcome the intrinsic energy and speed issues of traditional von Neumann based …
overcome the intrinsic energy and speed issues of traditional von Neumann based …
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
Thermal‐Responsive Polyoxometalate–Metalloviologen Hybrid: Reversible Intermolecular Three‐Component Reaction and Temperature‐Regulated Resistive …
YR Huang, XL Lin, B Chen, HD Zheng… - Angewandte Chemie …, 2021 - Wiley Online Library
The development of new‐type memristors with special performance is of great interest.
Herein, an inorganic‐organic hybrid crystalline polyoxometalate (POM) with usual dynamic …
Herein, an inorganic‐organic hybrid crystalline polyoxometalate (POM) with usual dynamic …
Vertical GaN power devices: Device principles and fabrication technologies—Part II
Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic
devices and systems with higher energy efficiency, higher power density, faster switching …
devices and systems with higher energy efficiency, higher power density, faster switching …
A review on GaN-based two-terminal devices grown on Si substrates
Gallium nitride (GaN) based two-terminal devices, such as Schottky barrier diodes (SBDs),
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
Enhancement-mode GaN transistor technology for harsh environment operation
This letter reports an enhancement-mode (E-mode) GaN transistor technology which has
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
been demonstrated to operate in a simulated Venus environment (460° C,~ 92 atm …
Asymmetric GaN/ZnO engineered resistive memory device for electronic synapses
The asymmetric resistive memory device can be more suitable to reduce the crosstalk effect
in a crossbar array. Similarly, this work focused on the material and design concept to …
in a crossbar array. Similarly, this work focused on the material and design concept to …
GaN-based threshold switching behaviors at high temperatures enabled by interface engineering for harsh environment memory applications
We demonstrate threshold switching behaviors with working temperatures up to 500° C
based on GaN vertical pn diodes, and these devices survived a passive test in a simulated …
based on GaN vertical pn diodes, and these devices survived a passive test in a simulated …
Piezotronic synapse based on a single GaN microwire for artificial sensory systems
Tactile information is efficiently captured and processed through a complex sensory system
combined with mechanoreceptors, neurons, and synapses in human skin. Synapses are …
combined with mechanoreceptors, neurons, and synapses in human skin. Synapses are …
Low temperature memory effects in AlGaN/GaN nanochannels
H Sánchez-Martín, E Pérez-Martín… - Applied Physics …, 2023 - pubs.aip.org
Two-terminal devices based on an AlGaN/GaN nanochannel exhibit a significant hysteresis
in their current–voltage curve due to their large surface-to-volume ratio. Surface effects at the …
in their current–voltage curve due to their large surface-to-volume ratio. Surface effects at the …