Field emission electron sources in vacuum electronics are largely considered to achieve
faster response, higher efficiency and lower energy consumption in comparison with …

2D layered materials are widely recognized as the revolutionary class of materials, and hold
great promise in the modern device technology industries. The 2D materials family covers …

We report here the field emission studies of a layered WS2-RGO composite at the base
pressure of~ 1× 10− 8 mbar. The turn on field required to draw a field emission current …

This study deals with the electrical transport in back‐gate field‐effect transistors with ultrathin
palladium diselenide (PdSe2) channels. The devices are normally‐on and exhibit dominant …

Electron field emission is a quantum tunneling phenomenon whereby electrons are emitted
from a solid surface due to a strong electric field. Graphene and its derivatives are expected …

This study reports the electrical transport and the field emission properties of individual multi‐
walled tungsten disulphide (WS2) nanotubes (NTs) under electron beam irradiation and …

Graphenes are beneficial to electrons field emission due to its high aspect ratio, high carrier
density, the larger carrier mobility, excellent electrical and thermal conductivity, excellent …

Monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor
deposition onto SiO2/Si substrates, are exploited to fabricate field‐effect transistors with n …

We report the electrical characterization and field emission properties of MoS 2 bilayers
deposited on a SiO 2/Si substrate. Current–voltage characteristics are measured in the back …

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm
from the 500 nm wide graphene conductive channel, using a single lithographic step. We …