A unified moment tensor potential for silicon, oxygen, and silica
K Zongo, H Sun, C Ouellet-Plamondon… - npj Computational …, 2024 - nature.com
Si and its oxides have been extensively explored in theoretical research due to their
technological importance. Simultaneously describing interatomic interactions within both Si …
technological importance. Simultaneously describing interatomic interactions within both Si …
Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices
Y Yan, Z Jin, H Zhang, D Yang - International Journal of Minerals …, 2024 - Springer
In recent years, ultra-wide bandgap β-Ga2O3 has emerged as a fascinating semiconductor
material due to its great potential in power and photoelectric devices. In semiconductor …
material due to its great potential in power and photoelectric devices. In semiconductor …
Oxygen Impurity-Tuned Structure and Adhesion Properties of the Cu/SiO2 Interface
M Lan, G Yan, W Yu, S Shen - ACS Applied Materials & Interfaces, 2024 - ACS Publications
The properties of the Cu/SiO2 interface usually deteriorate in the complex atmospheric
environment, which may limit its performance and application in the engineering. Using the …
environment, which may limit its performance and application in the engineering. Using the …
[HTML][HTML] β-氧化镓单晶及其器件热处理的研究进展
严宇超, 金竹, 张辉, 杨德仁 - International Journal of Minerals …, 2024 - ijmmm.ustb.edu.cn
中文摘要近年来, 超宽带隙半导体β-氧化镓凭借其有意的物理性质而被认为在功率器件和紫外
光电器件方面具有极大的应用潜力. 在半导体工业中, 热处理作为一种方便有效的单晶衬底性质 …
光电器件方面具有极大的应用潜力. 在半导体工业中, 热处理作为一种方便有效的单晶衬底性质 …
SDS and TX-100 performance in removing Cd ion from contaminated sand in flushing column
In this study, contaminated sand by cadmium (Cd 2+) ion was cleansed by surfactant foam in
a flushing column. The ability to remove Cd 2+ ion on the sand surface influenced by the …
a flushing column. The ability to remove Cd 2+ ion on the sand surface influenced by the …
Machine Learning Force Field for Thermal Oxidation of Silicon
L Cvitkovich, F Fehringer, C Wilhelmer… - arXiv preprint arXiv …, 2024 - arxiv.org
Looking back at seven decades of highly extensive application in the semiconductor
industry, silicon and its native oxide SiO $ _2 $ are still at the heart of several technological …
industry, silicon and its native oxide SiO $ _2 $ are still at the heart of several technological …
Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubits
On the quest to understand and reduce environmental noise in Si spin qubits, hyperfine
interactions between electron and nuclear spins impose a major challenge. Silicon is a …
interactions between electron and nuclear spins impose a major challenge. Silicon is a …
A DLTS study on Deep Trench Processing induced Trap States in Silicon Photodiodes
P Stampfer, F Roger, L Cvitkovich… - … on Device and …, 2024 - ieeexplore.ieee.org
We present a Deep Level Transient Spectroscopy (DLTS) study on dedicated test samples
to investigate the defect landscape of deep trench (DT) sidewalls. The DT is commonly used …
to investigate the defect landscape of deep trench (DT) sidewalls. The DT is commonly used …
Variability in Si/SiGe and Si/SiO2 Spin Qubits due to Interfacial Disorder
Silicon provides a promising platform to host solid-state spin qubits owing to long coherence
times through isotopic purification and the highly advanced level of development in material …
times through isotopic purification and the highly advanced level of development in material …
Bridging Molecular Dynamics and Neuroscience: Machine Learning for Efficient Simulations and Biomedical Signal Processing
D Milardovich - 2024 - repositum.tuwien.at
The pace of development in the microelectronics field is among the fastest across all
industries. In line with Moore's Law, the number of transistors in a single integrated circuit …
industries. In line with Moore's Law, the number of transistors in a single integrated circuit …