14 JS KANG and DK SCHRODER range in CCDs and the refresh time in dynamic RAMs all
depend on the carrier generation lifetime; ie, carrier generation in the space-charge region …

This book describes means in improving the technology of LSI/VLSI ICs production. It does
so by concentrating on improvements of manufacturing yield and quality of the products by …

A successful integration of Via-middle TSV process in DRAM technology with major process
issues is introduced. Fast TSV open/short detection and how to trade-off in choice repair …

The transient response of a pulsed MOS capacitor is used to calculate the minority-carrier
generation lifetime. For Si substrate with a long lifetime, traditional approaches suffer from …

The Zerbst method used for the measurement of minority-charge-carrier generation lifetime
in MOS capacitors has been modified. The suggested fast method avoids the time …

We report rapid, non-quasistatic CV (capacitance–voltage) measurements for a
comprehensive characterization of MOS structures. The purpose is to speed up and simplify …

A fast triangular-voltage sweep CV method to determine generation lifetime and surface
generation velocity is presented. With the new method considerable saving time can be …

This paper describes a method to obtain the depth profile of generation lifetime in a
semiconductor using a MOS capacitor. The capacitance is kept constant at a number of …

One of the problems of automatically measuring lifetime using the Zerbst technique is the
estimation of the total time required for measurement. The paper addresses this problem …

The effect of tunneling currents on the transient from deep depletion towards equilibrium in
thin oxide metal–oxide–semiconductor capacitors was experimentally investigated. Very thin …