Heteroepitaxial growth of III-V semiconductors on silicon

JS Park, M Tang, S Chen, H Liu - Crystals, 2020 - mdpi.com
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

Review of Si-based GeSn CVD growth and optoelectronic applications

Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si

K Tomioka, J Motohisa, S Hara, K Hiruma, T Fukui - Nano letters, 2010 - ACS Publications
We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si
substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned …

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

TE Kazior - … Transactions of the Royal Society A …, 2014 - royalsocietypublishing.org
Advances in silicon technology continue to revolutionize micro-/nano-electronics. However,
Si cannot do everything, and devices/components based on other materials systems are …

Germanium based photonic components toward a full silicon/germanium photonic platform

V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

[HTML][HTML] Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel… - APL materials, 2014 - pubs.aip.org
We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-oI) fabricated by
the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure …

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

WE Hoke, RV Chelakara, JP Bettencourt… - Journal of Vacuum …, 2012 - pubs.aip.org
GaN high electron mobility transistors (HEMTs) were monolithically integrated with silicon
CMOS to create a functional current mirror circuit. The integrated circuit was fabricated on …

Aspect ratio trapping: a unique technology for integrating Ge and III-Vs with silicon CMOS

JG Fiorenza, JS Park, J Hydrick, J Li, J Li… - ECS …, 2010 - iopscience.iop.org
This paper describes the recent development of the Aspect Ratio Trapping (ART)
heterointegration technique. This technique uses high aspect ratio sub-micron trenches to …

Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

JM Hartmann, A Abbadie, JP Barnes, JM Fédéli… - Journal of crystal …, 2010 - Elsevier
Using a low temperature/high temperature strategy, we have grown thin (0.27 μm) and thick
(2.45 μm) Ge layers on Si (001) substrates that we have submitted to various constant …

THz bandwidth InP HBT technologies and heterogeneous integration with Si CMOS

M Urteaga, A Carter, Z Griffith, R Pierson… - 2016 IEEE Bipolar …, 2016 - ieeexplore.ieee.org
Through aggressive lithographical and epitaxial scaling, the bandwidths of InP-based
heterojunction bipolar transistors have been extended to THz frequencies. At 130nm emitter …