Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si
substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned …

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However,
Si cannot do everything, and devices/components based on other materials systems are …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-oI) fabricated by
the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure …

GaN high electron mobility transistors (HEMTs) were monolithically integrated with silicon
CMOS to create a functional current mirror circuit. The integrated circuit was fabricated on …

This paper describes the recent development of the Aspect Ratio Trapping (ART)
heterointegration technique. This technique uses high aspect ratio sub-micron trenches to …

Using a low temperature/high temperature strategy, we have grown thin (0.27 μm) and thick
(2.45 μm) Ge layers on Si (001) substrates that we have submitted to various constant …

Through aggressive lithographical and epitaxial scaling, the bandwidths of InP-based
heterojunction bipolar transistors have been extended to THz frequencies. At 130nm emitter …